Project Objective and Mission
The objective of the Center for Physics and Technology of Nitride Semiconductors “GaN-Unipress” is to develop a world-class research facility specializing in nitride semiconductors (gallium nitride – GaN) and their advanced applications in power electronics and quantum technologies.
The project builds upon the unique scientific and technological expertise of the Institute of High Pressure Physics of the Polish Academy of Sciences (IHPP PAS / Unipress), featuring state-of-the-art infrastructure and extensive competencies in:
- ammonothermal growth of GaN single crystals with unprecedented structural quality,
- advanced slicing, polishing, and surface preparation of substrates,
- epitaxy of quantum structures (MOVPE, HVPE),
- fabrication of modern semiconductor devices using GaN-on-GaN technology,
- theoretical modeling and multiscale simulations.
The project does not focus solely on basic research – it is dedicated to developing technologies with high commercialization and implementation potential, integrating the entire value chain: from crystal growth of starting materials, through device engineering, to digital process control powered by artificial intelligence. Ultimately, “GaN-Unipress” aims to reinforce the global leadership position of Unipress and Poland in modern semiconductor technologies.
Work Packages
The project is structured around the synergy of four closely integrated research packages:
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WP1: GaN Crystal Growth (Leader: Robert Kucharski)
Development of ammonothermal crystallization technology to achieve 4-inch GaN substrates of record-high structural perfection (exhibiting the Borrmann effect) using monolithic enlargement and seed joining (tiling). -
WP2: GaN Power Diodes (Leader: Tomasz Sochacki)
Design and fabrication of vertical power diodes (Schottky, p-n, p-i-n) on native GaN substrates, employing epitaxy, ion implantation, and innovative Ultra-High Pressure Annealing (UHPA) activation. -
WP3: Quantum Technologies (Leader: Michał Boćkowski)
Development of single-photon sources and quantum sensors based on GaN doped with selected rare-earth ions (Er, Tb) using ion implantation and ultra-high pressure annealing. -
WP4: Artificial Intelligence & Machine Learning (AI & ML) (Leader: Paweł Kempisty)
Integration of experimental and simulation data across all packages, creation of a digital twin for the ammonothermal reactor, and acceleration of R&D cycles using machine learning techniques.
International Scientific Committee
The International Scientific Committee (ISC) of the project comprises world-renowned leaders in semiconductor science and technology: