Strong Representation of the Project at IWN 2026 in Japan
Researchers from the "GaN-Unipress" Center and IHPP PAS are actively participating in the International Workshop on Nitride Semiconductors 2026 (IWN 2026) held in Kumamoto, Japan (November 8–13, 2026). An invited lecture is delivered by Tomasz Sochacki ("From Bulk GaN to Quantum and Power Devices: Crystals, Epitaxy, and Extreme Processing"). In addition, project teams are presenting multiple oral and poster contributions focusing on ammonothermal growth, ultra-high pressure annealing (UHPA), dopant activation, vertical power diodes, and advanced multiscale modeling.
Presentation of GaN-Unipress Results at FNP Connect
At the FNP Connect — 5th Interdisciplinary Scientific Conference, key achievements from research packages WP1–WP4 were highlighted, including the synthesis of long GaN seeds (180–218 mm) for 4-inch substrate crystallization, as well as progress in diode epitaxial structures and passivation dielectrics.
Scientific Talk at the DRIP21 Conference in Warsaw
During the 21st International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP21) held in Warsaw, Tomasz Sochacki delivered a presentation on structural defect physics and high-resolution electrical imaging of GaN substrates.
Presentation at the E-MRS Fall Meeting in Warsaw
At the European Materials Research Society (E-MRS Fall Meeting) in Warsaw, results on optimizing electrical properties of GaN substrates were showcased. The talk was given by Tomasz Sochacki, covering challenges central to vertical power diode architectures within package WP2.
Invited Talk at the NUSOD 2026 Conference in Cork
Konrad Sakowski delivered an invited presentation entitled "Drift-Diffusion Simulation of GaN-Based Luminescent Heterostructures" at the international Numerical Simulation of Optoelectronic Devices (NUSOD 2026) conference in Cork, Ireland. He also presented computational workflows developed within WP4 and participated in technical workshops.
Tutorial Lecture and Attendance at the SSIE 2026 Summer School in Italy
At the renowned SSIE 2026 Summer School in Brixen, Italy, Tomasz Sochacki delivered an invited tutorial lecture entitled "GaN on GaN: From Bulk Crystals to Device 2.0 – Substrates, Epitaxy and the New Power Electronics", reviewing bulk crystals, epitaxial regrowth, and next-generation power electronics. Roman Hrytsak also participated in the school, advancing experimental and simulation work within the WP2 team.
Team Expansion and Laboratory Equipment Procurement
The research team has been strengthened by new specialists in electrical characterization and computational modeling. Public procurement procedures were initiated for high-performance computing clusters and advanced laboratory instrumentation.
Invited Lecture at the WOCSDICE-EXMATEC 2026 Conference in Gdańsk
At the joint WOCSDICE-EXMATEC 2026 meeting (Workshop on Compound Semiconductor Devices and Integrated Circuits & Expert Evaluation of New Materials for Extreme Conditions) in Gdańsk, Tomasz Sochacki presented an invited talk entitled "Growth-mode-induced defects in bulk GaN crystals", analyzing defect structures induced across different growth modes of bulk GaN.
Polish-Finnish Nitride Semiconductor Symposium in Helsinki
A delegation from GaN-Unipress, including Michał Boćkowski, Paweł Kempisty, Konrad Sakowski, Robert Kucharski, and Tomasz Sochacki, participated in the 2nd Finnish-Polish Symposium on Nitride Semiconductor Science and Technology in Helsinki. The event focused on emerging GaN physics, materials processing, structural characterization, novel devices, and fostering the European innovation ecosystem.
Scientific Seminar at the Faculty of Physics, University of Warsaw
Michał Boćkowski gave an invited seminar for the academic community of the Faculty of Physics, University of Warsaw. He outlined the GaN-on-GaN technological platform developed at IHPP PAS, along with the strategic research and commercialization goals of the "GaN-Unipress" project.
GaN-Unipress Project Featured on Polish National Radio
Michał Boćkowski was featured on Polish Radio Channel 1 in the program "Eureka. People of Science". He discussed the transformative potential of gallium nitride single crystals for high-power electronics and quantum technologies, as well as the mission of the newly established Center for Physics and Technology of Nitride Semiconductors.
Lecture at the International ISHA 2026 Seminar
As part of the online seminar series hosted by the International Solvothermal and Hydrothermal Association (ISHA), Tomasz Sochacki presented a lecture entitled "Ammonothermal Growth of GaN Crystals: From Fundamentals to the State of the Art", introducing the international community to the fundamental physics of ammonothermal crystallization and the project's roadmap toward large-diameter substrates.
Official Launch of the "GaN-Unipress" Project
The Institute of High Pressure Physics of the Polish Academy of Sciences officially launched the 4-year project within the International Research Agendas (IRAP FENG) program, co-financed by the European Funds for a Modern Economy 2021–2027.